Download e-book for iPad: Basic Principles of Power Electronics by Prof. Dr.-Ing. Klemens Heumann (auth.)

By Prof. Dr.-Ing. Klemens Heumann (auth.)

ISBN-10: 3642826741

ISBN-13: 9783642826740

ISBN-10: 3642826768

ISBN-13: 9783642826764

The expertise embodied through the identify «power electronics» is advanced. It involves either energy point and sign point electronics, in addition to thermal, mechanical, regulate, and defense platforms. the facility circuit, that a part of the approach really processing strength, should be considered an amplifier round that is put a closed loop keep an eye on system.
The aim of this publication is to supply an simply understood exposition of the foundations of energy electronics. universal positive factors of platforms and their habit are pointed out which will facilitate figuring out. Thyristor converters are exclusive and handled in keeping with their mode of commutation. Circuits for numerous converters and their controls are awarded, in addition to an outline of ancillary circuits reminiscent of these required for snubbing and gate drives.
Thermal and electric homes of semiconductor energy units are mentioned. The line-converter and converter-load interfaces are tested, resulting in a few common statements being made approximately strength move. software components are pointed out and classified with admire to strength and frequency levels. the numerous tables provided within the e-book offer an simply used reference resource.

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Extra resources for Basic Principles of Power Electronics

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The polarity of the firing current is indifferent. Triacs reach peak blocking voltages between 1000 and 1500 V with currents of over 100 A. Critical is the acceptable rate of change of voltage after commutation which only allows for 10 V/~s. Triacs are used in electronic contactors and in light dimmers (see Sect. 1 ) . 2 Asymmetrical Silicon Controlled Rectifier (ASCR) The asymmetrical silicon controlled rectifier has a strongly reduced capability of blocking voltage in reverse direction. Through a highdoped n-zone this is limited to about 20 V which allows the n-basezone thickness to be reduced without afflicting the off-state voltage in forward direction.

The gate controlled conduction spreading time can exceed 100 Ils depending upon the diameter of the silicon slice and the arrangement of the gate terminal. 1 ) converted to heat can assume considerable momentary values of several kW. 11]. 9 shows the turn-off process of a thyristor. As with the semiconductor diode after passing through zero the thyristor current first continues to flow unhindered in the opposite direction. Only at instant t2 does the junction on the cathode side begin to assume reverse voltage.

In converter circuits the danger of short circuits occur due to the selfconducting characteristic of these elements. For this reason the full negative pinch off voltage always has to be brought to the gate before a drain source voltage is applied. / -25V II j 300 400 -3OV L 500 V 600 Uos- - Fig. 25a,b. Static-induction transistor (SIT). a Structure; b output characteristic curves 4 Snubber Circuits, Triggering, Cooling, and Protection Devices For power semiconductors to operate properly in converter connections three prerequisites must be satisfied: 1.

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Basic Principles of Power Electronics by Prof. Dr.-Ing. Klemens Heumann (auth.)


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